- Brown, A.S. and Nguyen, L.D. and Metzger, R.A. and Matloubian, M. and Schrnitz, A.E. and Lui, M. and Wilson, R.G. and Henige, J.A., Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers,
Institute of Physics Conference Series, vol. 120
pp. 281 - 286 .
(last updated on 2007/04/14)
High electron mobility transistors fabricated from GaInAs/AlInAs modulation-doped structure currently exhibit the highest current gain cut-off frequency, highest maximum frequency of oscillation and lowest noise figure of any three terminal device. The data presented show that the degraded characteristics of the inverted modulation-doped interface, as compared with the normal AlInAs on GaInAs, result from the segregation of silicon in AlInAs. The authors have reduced the magnitude of these deleterious effects by growing a thin layer of AlInAs immediately following the doped region at significantly reduced substrate temperatures. The degree of silicon segregation as a fucntion of substrate temperature is discussed.also
Silicon and Alloys - Diffusion;Semiconducting Gallium Arsenide;Semiconducting Indium Compounds;Semiconducting Aluminum Compounds;Molecular Beam Epitaxy - Applications;