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In this paper, the variations of the main characteristics in three SOI device structures due to channel length and thin-film thickness variations are investigated. The structures are studied in a 32 nm technology and include SOI-GPS (Ground-Plane in Substrate), SOI-GPB (Ground-Plane in BOX), and SOI-WGP (Without Ground Plane). For this study, we assume normal distributions for the channel length and thin-film thickness of the transistors and then obtain the distributions for the threshold voltage, leakage, DIBL coefficient, and subthreshold swing. The results show that the GPS structure is more resistant against the variations when compared to the other two structures.