Indium Gallium Nitride (InGaN) Solar Cell
Agency / Branch:
DOD / DARPA
This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique, combined with lattice-matched substrates and state of the art device fabrication.
Small Business Information at Submission:
1019 Collier Road Suite C1 Atlanta, GA 30318
Number of Employees: