I find this stuff very confusing, and when my instructor did a question similar to this in class, he quickly breezed through it without thoroughly explaining where to look for and get the values needed. I'm so lost on this one, so if anyone out here can help me solve this, and more explicitly indicate where all the required values come from, I'd be in your debt..
A MOS system has an aluminum gate and 1Ω-cm p-type silicon substrate. Assueme there is an oxide surface charge density (Qf/q)=1.5x1010cm-2.
i) if the oxide thickness is 10nm, determine VT (assume the substrate is only biased from the gate).
ii) Design the channel dimensions so that the resulting MOSFET ouputs a saturation current of 2mA when VG is 1 volt above threshold. You may assume ideal long-channel theory applies with un=750cm2V-1s-1 and a bulk charge factor of 1.3
iii) Using the design calculations made in ii) determine the minimum dimensions the MOSFET can be scaled to before velocity saturation occurs.