'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs
Tong, C. F., Mawby, P. A. (Philip A.) and Covington, James A., 1973- (2009) 'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs. In: 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, Spain, September 08-10, 2009. Published in: EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9 pp. 5471-5475.Full text not available from this repository.
Official URL: http://0-ieeexplore.ieee.org.pugwash.lib.warwick.a...
This paper presents a 30V range 'Field Balanced' Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Q(gd) Of 1.0 nC mm(-2) for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 m Omega nC to around 6.40 m Omega nC. From this investigation, it has been demonstrated that the 'Field Balanced' on a a Split-Gate structure can give a good R-dsON vs Q(gd) trade off. The exceptionally low Q(gd) will allow the 'Field Balanced' structure to achieve a good efficiency even in high switching frequency converter.
|Item Type:||Conference Item (Paper)|
|Subjects:||Q Science > QA Mathematics > QA76 Electronic computers. Computer science. Computer software
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Science > Engineering|
|Journal or Publication Title:||EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9|
|Number of Pages:||5|
|Page Range:||pp. 5471-5475|
|Access rights to Published version:||Restricted or Subscription Access|
|Conference Paper Type:||Paper|
|Title of Event:||13th European Conference on Power Electronics and Applications (EPE 2009)|
|Type of Event:||Conference|
|Location of Event:||Barcelona, Spain|
|Date(s) of Event:||September 08-10, 2009|
Actions (login required)