Antonova, I V and Gulyaev, M B and Cherkov, A G and Volodin, V A and Marin, D V and Skuratov, V A and Jedrzejewski, J and Balberg, I (2009) The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation. Nanotechnology, 20 (9). 095205 (5pp).
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Official URL: http://stacks.iop.org/0957-4484/20/095205
We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO2) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||09 May 2009 00:22|
|Last Modified:||06 Aug 2009 11:31|
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