Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs
Alatise, Olayiwola M., Kennedy, Ian, Petkos, George and Koh, Adrian. (2011) Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.11 (No.1). pp. 157-163. ISSN 1530-4388
WRAP_Alatise_1070562-es-091211-ieee_tdmr_reliability_avalanched_power_mosfet.pdf - Accepted Version - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Official URL: http://dx.doi.org/10.1109/TDMR.2010.2102026
This paper, for the first time, investigates the reliability of wire-bonded low-voltage discrete power trench n-MOSFETs that have been subjected to repetitive unclamped inductive switching (RUIS). Automotive MOSFETs driving inductive loads may be subjected to RUIS; hence, there is a need to characterize the failure mechanisms in such applications. The failure mechanisms of repetitively avalanched wire-bonded MOSFETs are shown to be wire-bond lift-off and source metal degradation/fatigue due to thermomechanical stress cycling. Temperature excursions from avalanche pulses cause thermomechanical stresses on the wire-bond/source-metal interface as a result of differences in thermal expansion coefficients between silicon and aluminum. Trench MOSFETs exhibited an average of 10% increase in on-state resistance due to source metal fatigue after 100 million cycles of repetitive avalanche. The number of cycles to failure is investigated as a function of the avalanched induced temperature changes and is shown to follow the Coffin-Manson law. These results are important for designers of automotive systems since they are capable of predicting the long-term reliability of wire-bonded discrete power semiconductor components.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Divisions:||Faculty of Science > Engineering|
|Library of Congress Subject Headings (LCSH):||Metal oxide semiconductor field-effect transistors, Wire bonding (Electronic packaging)|
|Journal or Publication Title:||IEEE Transactions on Device and Materials Reliability|
|Official Date:||March 2011|
|Page Range:||pp. 157-163|
|Access rights to Published version:||Restricted or Subscription Access|
 I. Pawel, R. Siemieniec, M. Rosch, F. Hirler, and R. Herzer, ―Experimental study and simulations on two different avalanche modes in trench power MOSFETs,‖ IET Circuits Devices Syst., vol. 1, no. 5, pp. 341–346, Oct. 2007.
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