Prokofiev, A A and Yassievich, I N and Blom, A and Odnoblyudov, M A and Chao, K-A (2001) Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures. Nanotechnology, 12 (4). pp. 457-461.
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Official URL: http://stacks.iop.org/0957-4484/12/457
A new approach for calculation of resonant state parameters is developed. The method proposed allows us to solve different scattering problems, such as scattering and capture probability as well as calculations of shifts and widths of energy levels. It has been applied to the problem of resonant states induced by impurities in the barrier of quantum wells and by strain in uniaxially stressed germanium.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 10:41|
|Last Modified:||20 Mar 2009 08:58|
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