Affiliation: University of Tokyo
- Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrateKatsuaki Tanabe
Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
Opt Express 17:7036-42. 2009..This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon...
- Photonic crystal nanocavity laser with a single quantum dot gainMasahiro Nomura
Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
Opt Express 17:15975-82. 2009....
- GaAs-based air-slot photonic crystal nanocavity for optomechanical oscillatorsMasahiro Nomura
Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
Opt Express 20:5204-12. 2012..This high mechanical quality factor of a GaAs-based structure stems from low thermoelastic loss and leads to more effective optical control of nanomechanical oscillators...
- Circularly polarized light emission from semiconductor planar chiral nanostructuresKuniaki Konishi
Photon Science Center, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo 113 8656, Japan and Department of Applied Physics, The University of Tokyo and CREST JST, Hongo, Tokyo 113 8656, Japan
Phys Rev Lett 106:057402. 2011..A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results...