Compound semiconductor nanotube materials grown and fabricated
1 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
Nanoscale Research Letters 2011, 6:627 doi:10.1186/1556-276X-6-627Published: 12 December 2011
A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good crystalline quality of InGaP, InGaAs, and GaAs materials was obtained through optimizing the growth condition. The fabricated GaAs/InGaAs/InGaP semiconductor nanotubes, with a diameter of 300 to 350 nm and a length of 1.8 to 2.0 μm, were achieved through normal device fabrication.