Infineon to build 300mm fab in Taiwan with partner David Manners Infineon Technologies is planning to build a joint venture 300mm semiconductor wafer fab in Taiwan in partnership with local manufacturer Nanya Technology. The two companies have signed a non-binding Memorandum of Understanding (MoU) about a wide-ranging cooperation on DRAMs to include both the joint venture fab, and an R&D collaboration for 0.09micron and 0.07micron production processes. The plan for the Infineon-Nanya joint venture is to build a 300mm fab in time to run first silicon by the end of 2003. By the second half of 2004, the intention is to be running 20,000 wafers a month. A second fab is a possibility. Infineon already has a joint venture fab in Taiwan called ProMos with partner Mosel-Vitelic.